boundary resistance

英 [ˈbaʊndri rɪˈzɪstəns] 美 [ˈbaʊndri rɪˈzɪstəns]

网络  边界电阻,边界阻力

电力



双语例句

  1. Because the stream moving along the bottom displaces the lighter fluid upward, a force must be provided to overcome boundary resistance.
    因为沿底部运动的异重流与上部较轻的流体置换,必须产生一种力来克服边界阻力。
  2. Analysing the effect of the boundary friction resistance on model tests principle and method of measuring friction factors.
    本文分析了边界摩擦阻力对相似材料模型试验的影响;
  3. By measuring the properties of R-X, grain resistance, grain boundary resistance, breakdown voltage, nonlinear exponent and barrier height, effects of the burying sintering process on semi-conductivity and nonlinear properties of TiO_2 multifunction ceramics were investigated by comparing with that of the traditional sintering process.
    通过复阻抗特性、晶粒电阻、晶界电阻、压敏电压、非线性系数及势垒高度的测定,研究埋烧与裸烧工艺对TiO2陶瓷的半导化以及电学非线性特性的影响。
  4. Based on the peeling stress mathematic model of thermal boundary resistance between Er-Ba-Cu-O film on MgO substrates, the model parameter identifier was described in this paper.
    依据基于热应力理论的高温超导薄膜材料界面热阻数学模型,对高温超导薄膜Er-Ba-Cu-O与其基体MgO界面热阻随热应力变化的模型进行参数辨识。
  5. The resistance measurement showed that the total and the grain boundary resistance decreased with increasing sintering temperature, further studies. disclosed the reasons for producing this phenomenon.
    电阻的测量结果表明,随烧结温度升高,ZrO2的晶界及总电阻逐步下降,进一步的研究揭示了产生这种现象的原因。
  6. Research and Design of Measuring System of Thermal Boundary Resistance Using Laser Photothermal Method
    激光光热法界面热阻测量系统研制
  7. The calculation equations of boundary layer resistance, active layer resistance and substrate layer resistance were obtained by investigating and correlating the effects of Reynold number, active layer thickness and boundary layer structure on permeation flux.
    研究雷诺数、活性层厚度和基膜结构对渗透通量的影响,可回归得到模型中边界层传质阻力、活性层传质阻力和基膜传质阻力计算公式。
  8. And puts forward a new method called the dynamic laser photothermal method to measure the thermal boundary resistance.
    提出了激光动态法测量界面热阻的新方法。
  9. Zinc-aluminium alloys are widely used in many industries because of their excellent integrated performance such as strength, impact toughness, dimension stability and grain-boundary corrosion resistance.
    锌铝合金由于加入了较多的铝,明显提高了其强度和冲击韧性,其中的镁可阻滞合金体积改变、减轻合金的晶间腐蚀。
  10. In view of relating to the heat analyses calculation, design and making of the aerospace devices, the thermal boundary resistance becomes the key problem of thermal control technique in aerospace.
    在航空航天领域,固体界面热阻是航天器热控技术中普遍存在和必须解决的分析计算与设计制造问题。
  11. The DC bias dependence of grain boundary resistance provides an indirect evidence for the IBLC model.
    晶界电阻随直流偏压变化的关系也为IBLC提供了间接的证据。
  12. From Cole Cole plot, The dependence of the grain resistance ( Rg) and grain boundary resistance ( Rgb) on temperature ( T) was obtained.
    根据ColeCole图,我们获得了材料的晶粒、晶界电阻随温度的变化关系。
  13. In the transportation of pipeline in high-viscous liquid, the heat flux is needed in calculation when making use of heat boundary layer reducing resistance.
    在高粘液体管道输送中,利用热边界层减阻需确定热流量的计算。
  14. A Refined Calculation of the Boundary Layer Resistance Outside the Leaf Stomata
    气孔表面上边界层阻力的进一步计算
  15. The results showed that with increasing of relative humidity, the grain resistance was basically changeless, and the grain boundary resistance decreased.
    材料晶粒电阻、晶界电阻等特征参数计算结果表明,晶粒电阻基本不随湿度变化,晶界电阻随湿度升高而降低。
  16. 33 to most isolates was not distinct or the boundary among resistance types are unclear. F_1 populations, and F_2 populations appeared mixed infection types when score the resistance.
    而对大多菌系的抗感分离不十分明显,或F1、F2代出现混合侵染型植株,或抗感类型组界比较模糊。
  17. Investigation on the mathematic model of thermal boundary resistance for thin-film high-T_c superconductors based on the peeling stress
    基于热应力的高温超导薄膜界面热阻模型研究
  18. The influence of grain boundary to specific resistance is the combination emission effects of dislocations, lattice vacant sites and impurities, which are largely gathered at grain boundary.
    晶界的有无对电阻率的影响很大,而晶界的多少对电阻率的影响较小。晶界对电阻率的影响,归因于晶界上大量存在的空位、位错及杂质对电子散射的综合效应。
  19. The results show that the films with dense and amorphous structure and lower grain boundary resistance were deposited at room temperature.
    研究结果表明,室温下沉积的薄膜为颗粒致密的非晶相结构,晶界电阻较小。
  20. With the increase of the substrate temperature, the preferential orientation of ZnO films along c-axis is augmented, the tensile stress along c-axis orientation decreases and the grain boundary resistance increases in a marked degree.
    随衬底温度的升高,薄膜沿c轴择优生长趋势明显增强,内应力减小,晶界效应增强,晶界电阻增大。
  21. It has been found that the boundary layer resistance is related with not only its thickness but also its formation process.
    发现边界层阻力不仅和其厚度有关,还和其形成过程有关。
  22. The changes of heat transfer mechanism resulted in that thermal boundary resistance and its optimization design have become a key techniques and science problem in directly cooled technology.
    由于传热机理的变化,在固体接触导热中,界面热阻及其最佳热耦合机理成为直接冷却的关键技术和科学问题。
  23. By considering the mass transfer resistance of gas-liquid boundary, the resistance of boundary layer from emulsifier membrane and the autocatalytic-type autoxidation reaction of PUFA compositely, a mathematical model of diffusion-oxidation was established.
    通过综合考虑气液边界传质阻力、油水边界乳化剂形成的液膜边界层阻力、PUFA自催化氧化反应动力学,建立了相应的扩散-氧化数学模型。
  24. The grain resistance and the grain boundary resistance decrease with increase of temperature, so that the electrical conductivity is improved.
    随着温度升高,晶粒电阻和晶界电阻逐渐降低,导电性更强。
  25. Verificating the rationality and feasibility of the measuring method and device, and it has a certain meaning for research of the thermal boundary resistance.
    验证了该测量方法和测量装置的合理性和可行性,对界面热阻的研究具有一定的意义。
  26. The results show that the boundary resistance cannot be neglected in the calculation of thermal resistance for SOI devices.
    结果表明,边界热阻在SOI器件尤其是薄二氧化硅背栅的双栅器件热阻的计算中不可忽略。
  27. The simulated annealing algorithm in the inverse analysis for determining the thermal conductivity and thermal boundary resistance is developed.
    同时开发针对此问题的逆解析算法&模拟退火算法,并根据测量结果进行热物性(导热系数,界面热阻)的计算。对实验中被测参数进行了敏感度分析。
  28. In addition, AC complex impedance also showed 2# sensor has a lower boundary reaction activation resistance.
    另外,交流阻抗特性也呈现出2样品比1样品具有更低界面反应活化电阻的特性。
  29. Since there are no segregation phase located at the grain boundary, it was proposed that the grain boundary high resistance layer originates from the grain boundary barriers.
    鉴于在晶界处没有偏析相,提出晶界高阻层起源于晶界势垒。